Yunmao (韫茂)

SiCE-Y8

6/8-Inch SiC Epitaxial CVD System

Self-developed SiC epitaxial CVD platform with proprietary gas paths and reaction chamber, delivering production-verified uniformity across 10 consecutive 8-inch runs — backed by 7×24h technical support and rapid field service worldwide via Foresee.

6/8"

Wafer Size

0.64%

R2R Thickness Uni

0.73%

R2R Doping Uni

~11μm

Epi Thickness/Run

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Wafer Size

6 / 8 inch

Reactor Type

Horizontal Hot-Wall

Process Gas

SiH₄, C₃H₈, H₂, N₂

Power

380V / 3-Phase

Doping Types

P-type & N-type

Service Response

24h On-Site

Product Story

Production-Proven SiC Epitaxy,
Built Without Import Dependency

SiC power devices are the backbone of next-generation EV inverters, fast chargers, and renewable energy converters — but the epitaxial growth step has traditionally depended on a handful of imported platforms with extended lead times and limited local support. The SiCE-Y8 changes this equation: a fully self-developed reactor backed by 100+ patent applications, delivering production-grade results with shorter lead times, 7×24h technical support, and rapid on-site service worldwide via Foresee.

"The multi-dimensional process tuning window lets you independently adjust thickness, doping, and uniformity — no more fighting coupled parameters."

— Yunmao Process Engineering Team

Capabilities

Where Performance Meets Independence

Verified Run-to-Run Repeatability

10 consecutive 8-inch runs with thickness uniformity 0.33–0.76% per wafer, doping at 8.86–8.97×10¹⁵ cm⁻³. Not a cherry-picked result — sustained production performance.

Proprietary Reactor Design

Self-developed gas paths and reaction chamber create a uniform flow field. Multi-dimensional tuning window decouples thickness, doping, and uniformity control.

Sub-1% Thickness Uni

Demonstrated best-case of 0.33% within-wafer uniformity on 8-inch substrates.

Precise Doping Control

Within-wafer doping uniformity as tight as 0.57%, enabling consistent device parameters.

Full Automation

Automated handling, execution, and data logging. Unattended production runs with full traceability.

Local Supply Chain

Spare parts via express delivery, rapid on-site service response. Global support through Foresee's distribution network.

Under the Hood

Technology Deep-Dive

Click each card to explore the technical details.

Self-Developed Gas Path and Reaction Chamber

Proprietary reactor design with uniform flow field across full wafer surface

The reactor is entirely self-developed — not licensed, not reverse-engineered. The gas delivery system creates a uniform flow field across the entire wafer surface, minimizing boundary layer thickness variations.

The multi-dimensional process tuning window enables independent optimization of thickness, doping, and uniformity. This decoupled control architecture significantly reduces the time from first wafer to qualified production recipe.

Uniformity Data: 10-Run Production Verification

Sub-1% thickness and doping uniformity across consecutive production runs

Actual numbers from 10 consecutive 8-inch production runs: epitaxial thickness averages ~11 μm per run. Within-wafer thickness uniformity ranges from 0.33% to 0.76%, with run-to-run thickness uniformity of ~0.64%.

Doping concentration averages ~8.86–8.97×10¹⁵ cm⁻³, with within-wafer doping uniformity from 0.57% to 1.66% and run-to-run doping uniformity of ~0.73%.

Automation and Process Control

Full automation with MES integration and timestamped traceability

Fully automated wafer handling, gas delivery sequencing, temperature ramping, and process execution. Every process variable is recorded and timestamped for fab quality traceability.

Integration-ready architecture supports connection to factory-level MES for centralized monitoring and statistical process control across multiple tools.

Performance Evidence

Measured Results, Not Marketing Claims

All data from 10 consecutive production runs on 8-inch 4H-SiC substrates. Full data package available upon request.

0.33–0.76%

Within-Wafer Thickness Uniformity

10-run range on 8" wafers

~0.64%

Run-to-Run Thickness Uniformity

10 consecutive runs

~0.73%

Run-to-Run Doping Uniformity

N-type, ~8.9×10¹⁵ cm⁻³

SiCE-Y8 vs. Typical Imported Platforms

Parameter	SiCE-Y8	Typical Imported Platform ¹
Wafer Size	6/8 inch	6/8 inch
R2R Thickness Uniformity	~0.64% (10-run verified)	Comparable (spec sheet only)
R2R Doping Uniformity	~0.73% (10-run verified)	Not always disclosed
Delivery Lead Time	Shorter manufacturing cycles	Typically longer international procurement
Service Response	Rapid on-site + 2h remote response	Varies by region
Service Bases	Global via Foresee	Typically overseas HQ
Core Technology	Self-developed reactor + gas path	Proprietary (limited local modification)

"Typical Imported Platform" reflects general industry characteristics of EU/US-origin horizontal hot-wall SiC epitaxial reactors. For a detailed side-by-side technical comparison, contact our engineering team.

Applications

Powering the SiC Revolution

SiC Power Devices

EV Inverters & Onboard Chargers

SiC MOSFET/Schottky epi for high-volume automotive power electronics. Sub-1% uniformity enables tighter device distributions and higher yield.

Charging Infrastructure

DC Fast Charging & Energy Conversion

250 kW+ DC fast chargers rely on SiC power modules. Same epi quality serves both vehicle and charging sides of the EV ecosystem.

Renewable Energy

Solar Inverters & Wind Power Converters

SiC-based power conversion for higher efficiency at multi-MW scale. High-throughput epi aligns with rapid renewable capacity buildout.

Industrial & Defense

Rail Transit, Servers, Military & Aerospace

Highest-reliability applications where device failure is not acceptable. Run-to-run consistency provides the epitaxial foundation for mission-critical power modules.

安装条件

场地要求

以下为关键性能概览。详细场地需求与完整规格在前期沟通后提供。

核心规格

反应器类型Horizontal Hot-Wall CVD
晶圆尺寸6-inch and 8-inch SiC
加热方式Induction Coil
气路系统5-port nozzle, multi-component mixing
电源380V, 3-Phase, 50Hz
工艺气体SiH₄, C₃H₈, H₂, N₂

详细参数与配置方案在前期沟通后提供。

客户服务

✓ 7×24 小时电话技术支持

✓ 故障 2 小时内远程技术响应

✓ 技术人员 24 小时内到达现场

✓ 备件快速支持服务

具体服务条款按合同约定。

Validation

Trust Built on Real Results

Yunmao (韫茂科技)

Founded in 2018 in China. Specializes in thin-film deposition equipment — ALD, PVD, CVD, and Epitaxy systems. 100+ patent applications, 50%+ R&D staff ratio, production base operational since September 2023.

20+

Products Across 4 Lines

ALD, PVD, CVD, and Epitaxy systems — covering research to production

100+

Patent Applications

50%+ R&D staff ratio, continuous innovation since 2018

24h

On-Site Service Response

7×24h phone support, 2h remote response, worldwide coverage via Foresee

National High-Tech

National High-Tech Enterprise (2021)

Specialized

Specialized & Innovative Enterprise (2022)

S&T Little Giant

Fujian S&T Little Giant (2023)

National Giant

National "Little Giant" (2024)

Common Questions

FAQ

Both 6-inch and 8-inch SiC substrates. The production data referenced on this page was generated on 8-inch wafers.

R2R thickness uniformity of ~0.64% and doping uniformity of ~0.73% across 10 consecutive runs on 8-inch wafers. These numbers are in the same class as leading imported platforms, with significantly shorter lead times and rapid on-site service via Foresee.

Baseline: ~11 μm epi thickness with N-type doping at ~8.9×10¹⁵ cm⁻³ on 8-inch wafers. Adjustable over a wide range for different device specs — from thin epi for Schottky diodes to thicker layers for high-voltage MOSFETs.

With a dedicated production base (operational since Sept 2023), Yunmao offers significantly shorter lead times than many imported alternatives. Contact our sales team for current delivery schedules based on your configuration requirements.

Entirely self-developed by Yunmao — gas delivery paths, reaction chamber, and process control architecture. Original engineering, not licensed or adapted technology.

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SiCE-Y8

Production-Proven SiC Epitaxy,
Built Without Import Dependency