Quantum · IBSD · Cluster · Perovskite · PVD · CVD · ALD
Thin Film Deposition
50+ systems across 8 deposition and process categories — from quantum-grade Josephson junction tools and ion beam precision optics to fully integrated multi-chamber cluster platforms.
Eight Process Categories, One Integrated Portfolio
From nanometer-precise atomic layers to high-throughput production coatings — complete thin film solutions covering every major deposition and surface treatment method.
Plasma Cleaning
Surface activation, organic removal, pre-deposition cleaning
4 systems All Deposition WorkflowsMagnetron Sputtering
Metals, alloys, TCO, hard coatings, optical multilayers
15 systems Semiconductors · Photovoltaics · DisplaysEvaporation
Lift-off, indium bumps, perovskite co-evaporation, organics
10 systems Solar · OLED · IR DetectorsALD
High-k dielectrics, MEMS passivation, powder coating, encapsulation
9 systems Semiconductors · MEMS · CatalysisCVD
Graphene, diamond, SiC epitaxy, CNT, battery anodes
5 systems Power Electronics · 2D MaterialsIon Beam (IBSD)
DUV optics, laser mirrors, telecom filters, precision coatings
1 platform Precision Optics · AerospaceCluster Systems
Multi-process under vacuum, Josephson junctions, device stacks
4 platforms Quantum Computing · PackagingVacuum Drying
Perovskite film drying, solvent flash evaporation
2 systems Perovskite Solar · Thin FilmDC · RF · Pulsed DC · HiPIMS
From compact benchtop to production-line scale — metals, alloys, oxides, nitrides on substrates up to 500 mm.
Magnetron sputtering is the most versatile PVD technique — energetic plasma ions bombard a target to deposit dense, well-adhered films of virtually any solid material. Ideal for electrode metallization, transparent conductive oxides (ITO/AZO), hard coatings, and multilayer optical stacks.
CoVap
Compact PVD, glovebox integration
NexDep
Full-featured thermal/e-beam workhorse
AMOD
Mid-size multi-technique with load-lock
EvoVac
Large-chamber highly customizable
Box Coater
Production-scale large-chamber PVD
Linear Sputter
Large-area for panels & wafers
PD-200C
Entry-level sputter coater, 2–3"
PD-300C
Lab-scale sputtering, 4"
PD-400C
Mid-size sputtering, 4–6"
PD-450CS
Glovebox-compatible, 4–8"
PD-500C
Production-ready, 4–6"
PD-550CS
Rectangular-target, 210–300 mm
PD-600C
Large-format, 6–8"
PD-5000C
Continuous multi-chamber production line
QBT-P
Dual-chamber UHV magnetron sputtering
Multi-Source · QCM Control · Glovebox Integration
Precision evaporation for lift-off, organic layers, indium bump bonding, and perovskite full-stack deposition.
Thermal and e-beam evaporation heat source materials until they sublimate or melt, depositing high-purity films in a line-of-sight process. With QCM rate control and multi-source capability, evaporation excels in lift-off patterning, organic/metallic contacts, and multi-layer perovskite solar cell co-evaporation.
VCD-210
Flash evaporator, glovebox, 210 mm
VCD-300
Large-area flash evaporator, 300 mm
PD-200I
Compact thermal evaporator, 80 mm
PD-300
Multi-source evaporator, 100 mm
PD-400
Front-door, 120 mm, 4–6 sources
PD-400S
Research, glovebox option, 150 mm
PD-450S
Production for solar & OLED, 210 mm
PD-500S
Large-chamber with e-beam, 230 mm
PD-550CS
Multi-source cluster, 280 mm
QBT-E
Dual-chamber UHV e-beam, −70–600°C
0.1–1.5 Å/cycle · 100% Conformality
Self-limiting surface reactions for gate dielectrics, MEMS passivation, nanostructure functionalization, and powder coating.
ALD deposits films one atomic layer at a time — each cycle adds exactly 0.1–1.5 Å regardless of surface geometry, coating deep trenches, porous membranes, and 3D nanostructures with identical thickness everywhere.
MINI
World's smallest desktop ALD, ~50 kg
ALD-100
Compact research ALD, 100 mm
ALD-200
Production thermal ALD, 8", 6 precursors
ALD ONE
Advanced ALD for oxides, nitrides, metals
QBT-A
Dual-chamber PEALD, ultra-low-O₂ TiN
PBATCH
Batch plasma ALD for optical coatings
CBATCH
Batch thermal ALD for LED & VCSEL
KG
Industrial powder ALD, 10–500 kg batch
GM
R&D powder ALD, 100–1000 mL
LPCVD · PECVD · MPCVD · SiC Epitaxy
Gas-phase synthesis of graphene, diamond, SiC, CNT, and conformal barrier films. Up to 1100°C.
CVD grows films from gas-phase chemical reactions, producing materials that PVD cannot achieve — single-layer graphene, single-crystal diamond, epitaxial SiC for power devices, and carbon nanotubes.
Multi-Process Integration Under Vacuum
Sequential PVD → ALD → etch without breaking vacuum. Robotic wafer transfer, programmable recipe sequencing.
Surface Activation & Organic Removal
Pre-deposition surface treatment — remove organic contaminants, improve adhesion, and activate surfaces for better film quality.
Sub-Angstrom Roughness for Precision Optics
When your optics demand near-bulk-density films with sub-angstrom roughness, IBSD delivers what magnetron sputtering cannot.
Perovskite Film Drying & Solvent Flash Evaporation
Rapid vacuum flash evaporation for uniform perovskite film drying — critical for reproducible solar cell fabrication.
Choosing the Right Deposition Method
| Stage | Technique | Principle | Key Metrics | Rate / Time | Best For |
|---|---|---|---|---|---|
| Pre-Treatment — Substrate Cleaning & Activation | |||||
| Pre | Plasma Cleaning | RF plasma oxidation/reduction | Contact angle <5° | 2–15 min/batch | Organic removal, surface activation, adhesion |
| Core Deposition — Film Growth | |||||
| Dep. | Magnetron Sputtering | Plasma ion bombardment | Thickness: Good (QCM); Conform.: Moderate | 10–100 nm/min | Metals, alloys, TCO, hard coatings |
| Dep. | Thermal Evaporation | Resistive heating | Thickness: Good (QCM); Conform.: Low | 50–500 nm/min | Simple metals, In bumps, organics |
| Dep. | E-Beam Evaporation | Electron beam heating | Thickness: Excellent; Conform.: Low | 1–100 Å/s | High-purity, refractory metals |
| Dep. | ALD | Self-limiting surface reactions | Thickness: Atomic precision; Conform.: 100% | 0.1–1.5 Å/cycle | High-k, MEMS passivation, nanostructures |
| Dep. | CVD (LP/PE/MP) | Gas-phase chemical reaction | Thickness: Good; Conform.: Good–Excellent | Process-dependent | Graphene, diamond, SiC epitaxy |
| Dep. | Ion Beam (IBSD) | Ion beam sputters target | Thickness: Excellent (optical); Conform.: Moderate | 1–10 nm/min | Precision optics, DUV/EUV coatings |
| Integ. | Cluster Systems | Multi-process under vacuum | Multi-chamber; transfer <10⁻⁷ Torr | Per process combo | Josephson junctions, device stacks |
| Post-Processing — Film Drying & Annealing | |||||
| Post | Vacuum Drying | Rapid vacuum flash evaporation | Vacuum: <100 Pa; Uniformity: ±3% | 30 s–5 min/wafer | Perovskite film drying, solvent flash |
Explore Thin Film Deposition Use Cases
Thin film deposition solutions support a wide range of applications across various industries.
Superconducting Qubit Fabrication via Shadow Evaporation
Al/AlOx/Al Josephson junctions deposited at controlled angles (±0.1°) achieve critical current variation <3.9% over 20×20 mm² chips.
Vacuum-Deposited Perovskite Solar Cells Exceed 24% Efficiency
Sequential vacuum deposition with Cl-alloy mediation achieves 24.42% PCE for single-junction cells and 27.2% for perovskite-silicon tandems.
Ion Beam Sputter Deposition for DUV & EUV Optical Coatings
IBSD produces near-bulk-density films with sub-angstrom surface roughness (<0.2 nm RMS).
CVD Growth of Graphene and Diamond Films
CVD synthesizes single-crystal graphene for flexible electronics and polycrystalline diamond films for thermal management.
Select the Right Deposition System for Your Application
The resources below will help you determine the thin film deposition solution for your application.
PDVACUUM Full Equipment Catalog
Complete product guide covering magnetron sputtering, evaporation, ALD, CVD, plasma cleaners, and vacuum drying.
YUNMAO ALD & Cluster Systems Guide
MINI desktop ALD, batch ALD, powder ALD, Nebula Cluster, and QBT-series UHV systems.
Angstrom Engineering Product Brochure
CoVap, NexDep, AMOD, EvoVac, Box Coater, Quantum Series, and ALD ONE.
Deposition Technology Selection Guide
Side-by-side comparison of sputtering, evaporation, ALD, CVD, and IBSD.
Frequently Asked Questions
Sputtering uses energetic plasma ions to eject atoms from a solid target, producing dense, well-adhered films. Evaporation heats source material until it sublimes, depositing high-purity films in a line-of-sight process.
ALD is the process of choice when you need angstrom-level thickness control, 100% conformality on high-aspect-ratio structures, or pinhole-free films at very low thicknesses.
Josephson junctions are typically fabricated using shadow evaporation — two aluminum layers deposited at precisely controlled angles with a controlled oxidation step in between.
Yes. Sequential vacuum deposition has achieved 24.42% PCE for single-junction cells and 27.2% for perovskite-silicon tandems.
IBSD uses a separate ion gun, decoupling ion energy from plasma conditions — producing films with near-bulk density and sub-angstrom roughness for precision optics.
LPCVD (500–1100°C) for graphene and 2D materials; PECVD (200–400°C) for SiOx/SiNx on temperature-sensitive substrates; MPCVD for single-crystal diamond films.
Your Thin Film Technology Partner
Broad Platform Coverage
Quantum Series, Reticle IBSD, Cluster platforms, perovskite co-evaporators — a comprehensive thin film portfolio under one roof.
Application Engineering
We understand Josephson junctions, optical coating design, and perovskite stoichiometry — and configure systems to match your process.
Flexible Options
International and domestic platforms at various price points. We recommend based on your specs, not margins.
Full Lifecycle Support
Consultation → spec → installation → training → process development → ongoing maintenance.